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Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 μm
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1992
Year
Aluminium NitridePhotonicsElectrical EngineeringIngaasp LatticeEngineeringLaser ScienceSemiconductor LasersApplied PhysicsLaser ApplicationsLaser MaterialIngaas/gaas/ingaasp/ingap 0.98Cavity FacetsLaser MaterialsOptoelectronicsHigh-power Lasers
Using InGaAsP lattice matched to GaAs, InGaAs/GaAs/InGaAsP/InGaP 0.98 μm GRINSCH SL-SQW lasers were fabricated for the first time. A high characteristic temperature of 215 K was measured at 10–70°C. A CW light output power of over 300 mW was achieved on 3 μm-wide ridge waveguide lasers with current-blocked regions near cavity facets.
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