Akira Iketani

980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers

M. Ohkubo, T. Ijichi, Akira Iketani et al. · IEEE Journal of Quantum Electronics · 1994 · 50 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 μm

M. Ohkubo, T. Ijichi, Akira Iketani et al. · Electronics Letters · 1992 · 31 citations

Aluminium Nitride, Photonics, Electrical Engineering +12

InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition

M. Ohkubo, Akira Iketani, T. Ijichi et al. · Applied Physics Letters · 1991 · 29 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

M. Ohkubo, Shu Namiki, T. Ijichi et al. · IEEE Journal of Quantum Electronics · 1993 · 25 citations

Optical Materials, Engineering, Laser Science +23

High power 1.017-μm strained-layer quantum well lasers grown by metalorganic chemical-vapor deposition

M. Ohkubo, Tetsuro Ijichi, Akira Iketani et al. · Applied Physics Letters · 1992 · 15 citations

Optical Materials, Engineering, Laser Science +18