Applied Physics Letters · 1991 · 29 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCurrent DensityCurrent GainDouble HeterostructuresGainGain EnhancementGraded JunctionsHeterojunction Bipolar TransistorsMetalorganic Chemical Vapor Deposition
We have fabricated InGaAs/InP double-heterojunction bipolar transistors (DHBTs) grown by metalorganic chemical vapor deposition (MOCVD). By inserting step graded InGaAsP layers between p+-InGaAs base and n−-InP collector, the current gain of DHBTs with the graded layers was about twice as large as that without the graded layers, and the dependence of collector current on collector/emitter voltage was smaller than that without graded layers. The current gain was measured up to 2300 with 25×25 μm2 emitter area at a collector current density of 1×104 A/cm2.
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Material properties of <i>p</i>-type GaAs at large dopings
Sandip Tiwari, Steven L. Wright · Applied Physics Letters · 1990 · 109 citations · Full text
High-speed InGaAs(P)/InP double-heterostructure bipolar transistors
R.N. Nottenburg, J.C. Bischoff, M. B. Panish et al. · IEEE Electron Device Letters · 1987 · 44 citations