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High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers

34

Citations

2

References

1990

Year

Abstract

In the present paper Ino.49Ga0. 51P was used in place of AlGaAs for the first time (InGaAs/GaAs/InGaP, hereafter).

References

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