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Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition
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1999
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Materials ScienceMaterials EngineeringAluminium NitrideEngineeringConformal DepositionSurface ScienceApplied PhysicsDeep TrenchesConformal TinSemiconductor Device FabricationAl2o3 Films DepositedThin FilmsChemical DepositionMicroelectronicsSurface ProcessingChemical Vapor DepositionAtomic Layer DepositionThin Film Processing
Perfectly conformal deposition into deep trenches or filling of them without keyhole formation is achieved (see Figure) by atomic layer deposition (ALD). Good conformality can be obtained with other CVD processes, but the unique surface-controlled, self-limiting growth mechanism of ALD may give the technique significant advantages over other methods for future generation IC technology.