IEEE Electron Device Letters · 1991 · 37 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesCmos Digital Circuit DesignCmos Radio-frequency CircuitsEffective ResistanceMicrowave Integrated Circuit DesignMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsRf Cmos Design
0.35- mu m complementary metal-oxide-semiconductor (CMOS)/silicon-on-sapphire (SOS) n- and p-channel MOSFETs with a metal-over-polysilicon T-gate structure for monolithic microwave integrated circuit (MMIC) and digital applications are reported. The measured values for the current-gain cutoff frequency f/sub T/ were >or=20 GHz for both n-channel and p-channel devices, and the values for the unilateral power-gain cutoff frequency f/sub max/ were 37 GHz for the p-channel and 53 GHz for the n-channel MOSFETs. The low effective resistance of the T-gate structure contributed to the very high f/sub max/ values. It is believed that these are the highest f/sub T/ and f/sub max/ values ever reported for MOS devices. The potential of SOS submicrometer MOSFETs for microwave circuit applications is demonstrated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Microwave solid state circuit design
Choice Reviews Online · 1988 · 863 citations
J. Warnock, P.-F. Lu, T. Chen et al. · 2003 · 23 citations