Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Abstract

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf SET, displacement sensitivities of 10−6 Å/Hz may be possible.