Growth and transport properties of relaxed epilayers of InAs on GaAs

Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in Ga<i>x</i>In1−<i>x</i>As

Sajal K. Paul, Jaydeep Roy, P. K. Basu · Journal of Applied Physics · 1991 · 203 citations

Natural Sciences, Materials Science, Physics +17

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

Zhen Fang, K. Y., R. M. Cohen et al. · Applied Physics Letters · 1991 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +11

The molecular beam epitaxial growth of InAs on GaAs(111)B- and (100)-oriented substrates: a comparative growth study

S. E. Hooper, D.I. Westwood, D. A. Woolf et al. · Semiconductor Science and Technology · 1993 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Molecular-beam epitaxial growth and transport properties of InAs epilayers

Ş. Kalem · Journal of Applied Physics · 1989 · 29 citations · Full text

Engineering, Materials Science, Physics +17

Defect control during growth of highly mismatched (100)

A. Trampert, E. Tournié, K. H. Ploog · Journal of Crystal Growth · 1995 · 24 citations

Engineering, Genetics, Fault-tolerant Computing +5