Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum

Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study

Richard C. Henderson · Journal of The Electrochemical Society · 1972 · 234 citations

Materials Science, Chemical Engineering, Engineering +13

Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si

L. Csepregi, J. W. Mayer, T. W. Sigmon · Physics Letters A · 1975 · 233 citations

Materials Science, Effect Measurements, Engineering +8

Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control

Yusuke Ota · Journal of The Electrochemical Society · 1977 · 70 citations

Engineering, Ultrahigh Vacuum, Low Reverse Leakage +16

Silicon epitaxy by solid-phase crystallization of deposited amorphous films

J. A. Roth, C. L. Anderson · Applied Physics Letters · 1977 · 66 citations

Materials Science, Room Temperature, Epitaxial Growth +12

EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUM

Hans Widmer · Applied Physics Letters · 1964 · 40 citations

Physics, Applied Physics, Semiconductor Device Fabrication +3