Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control

Abstract

Silicon single crystal films were made by molecular beam epitaxy (MBE) technique in an ultrahigh vacuum (UHV). Sb‐doped epitaxial films were grown on Czochralski (CZ) grown n+ , (111) or (100) substrates at temperatures ranging from 600° to 1050°C. The doping density of the films was controlled from high 1013 to high 1017/cm3. p‐type epitaxial films on n+ substrate were also grown from a boron‐doped source. TEM and preferential dislocation etching revealed that the epitaxial films are high quality single crystal with low dislocation density. The electrical properties of the epitaxial films were found to be bulklike. p+‐n‐n+ diodes were fabricated on these films and they showed low reverse leakage current and sharp breakdown. These diodes operated excellently at millimeter wave frequencies.