Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

M. D. Pashley · Physical review. B, Condensed matter · 1989 · 795 citations

Natural Sciences, Materials Science, Physics +17

Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

J.H. Neave, Peter J. Dobson, B.A. Joyce et al. · Applied Physics Letters · 1985 · 753 citations

Natural Sciences, Materials Science, Semiconductor Materials +16

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Akiko Gomyo, T. Suzuki, K. Kobayashi et al. · Applied Physics Letters · 1987 · 438 citations

Natural Sciences, Materials Science, Physics +17

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

Akiko Gomyo, K. Kobayashi, S. Kawata et al. · Journal of Crystal Growth · 1986 · 235 citations

Natural Sciences, Materials Engineering, Materials Science +16

Optical Properties of ZnSe Epilayers and Films

J. Gutowski, N. Presser, G. Kudlek · physica status solidi (a) · 1990 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +14