Applied Physics Letters · 2015 · 34 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsNanowiresOptical Communication SystemsOptical ModulationOptical SourcesSemiconductor HeterostructuresSemiconductor LasersBandwidthDifferential GainDirect ModulationHeterostructure LasersModulation BandwidthNanowire LasersSemiconductor NanowiresSignal Modulation
The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10−17 cm2).
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