Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2005 · 11 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsOptical Properties Of SemiconductorsPhotodetectorsQuantum DotsSemiconductor Device MaterialsSemiconductor PhysicsDetective Quantum EfficiencyDetector Quantum EfficiencyHigh-temperature Device OperationInfrared PhotodetectorsQuantum EfficiencyQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsSemiconductor Quantum Dots
Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared detection. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs including higher operation temperature and normal incidence detection. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). The device structures consist of multiple stacks of InAs quantum dots with InP barriers. High detectivities in the range of 10<sup>10</sup>cmHz<sup>1/2</sup>/W were obtained at 77K. The measurements at higher temperatures show better temperature dependent performance than QWIP. However, the performances of QDIPs are still far from the expected. One of the reasons is the low quantum efficiency due to the low fill factor of quantum dots layer. Resonant cavity enhanced QDIP has been studied to increase the quantum efficiency. Different schemes of mirrors using free carrier plasma and distributed Bragg reflector are discussed.
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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations
Natural Sciences, Materials Engineering, Materials Science +17
Resonant cavity enhanced photonic devices
M. Selim Ünlü, S. Strite · Journal of Applied Physics · 1995 · 670 citations