Japanese Journal of Applied Physics · 1981 · 27 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLaser Surface ProcessingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSurface OxidationThin Film OxidationDielectric BreakdownLaser Surface OxidationOxide Layer FormationSemiconductor OxidationSemiconductor Oxide Thin FilmsSurface Oxidation MechanismsThin Oxide FilmsThin Oxide Layers
A new oxidation process for forming oxide films on GaAs has been developed. Irradiation of a GaAs wafer with pulsed laser was carried out in an oxygen atmosphere in order to make a thin oxide layer onto a GaAs surface. Results of reflection electron diffraction analysis on the laser-irradiated surface indicate the oxide formation on the GaAs wafer. Auger depth profiles for the laser-irradiated GaAs showed an increase in the gallium-to-arsenic ratio within 500 Å in depth from the surface, while the oxygen concentration decreased monotonically with the distance from the surface. I - V measurements were performed to study the dielectric properties of the oxide layer and the dielectric breakdown was found to occur at about 12 V.
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Laser Annealing of Ion-Implanted Semiconductors
C. W. White, J. Narayan, R. T. Young · Science · 1979 · 153 citations
R. P. H. Chang, A. K. Sinha · Applied Physics Letters · 1976 · 89 citations