MBE growth and device processing of MWIR HgCdTe on large area Si substrates

Nonequilibrium devices for infra-red detection

T. Ashley, C.T. Elliott · Electronics Letters · 1985 · 197 citations

Engineering, Electrical Engineering, Optoelectronics +12

Towards background-limited, room-temperature, infrared photon detectors in the 3–13 μm wavelength range

C.T. Elliott, Neil T. Gordon, A. M. White · Applied Physics Letters · 1999 · 61 citations

Natural Sciences, Materials Science, Physics +17

MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

P. S. Wijewarnsuriya, M. Zandian, D. D. Edwall et al. · Journal of Electronic Materials · 1998 · 54 citations

Engineering, Materials Engineering, Materials Science +14

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

T. J. de Lyon, R. Rajavel, Julian A. Vigil et al. · Journal of Electronic Materials · 1998 · 45 citations

Engineering, Materials Engineering, Materials Science +16

Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy

R. Ashokan, Nibir K. Dhar, Bin Yang et al. · Journal of Electronic Materials · 2000 · 21 citations

Engineering, Materials Engineering, Materials Science +14