Applied Physics Letters · 1996 · 104 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsDevice ReliabilitySemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor ReliabilityBreakdown MechanismsDegradationFermi LevelFilm Breakdown MechanismsGate Oxide DegradationOxide BreakdownPolarity DependenceSilicon Dioxide
The polarity dependence observed for destructive breakdown of ultrathin silicon dioxide films is shown to be directly correlated to the oxide degradation caused by hot-electron-induced defect production. The probability of defect generation is also demonstrated to depend on the Fermi level position at the anode/oxide interface. The specific anode interface, whether substrate/oxide or gate/oxide, is shown to have no direct relationship to the degradation rate.