Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

Abstract

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 Ω/\square), and low specific contact resistivity (7.6×10) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio , subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs at sheet charge density of 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> .