EngineeringElectrical EngineeringPhysicsMicroelectronicsQuantum MechanicsSemiconductor DevicesCarrier TransportCharge Carrier TransportDevice ModelingNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsCharge ControlCharge Transport ModelingMosfet ModelingMosfet NoiseNanoscale TransistorsNoise In Field-effect TransistorsPoisson EquationQuantum Transport
In this paper we study the influence of the quantum effects on DC, Radio Frequency (RF) and microwave noise for nanoscale SGT transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional (2D) Schrodinger and Poisson equations. RF and noise performances are calculated using the active transmission line method. A comparison between classical and quantum charge control models, and between drift-diffusion and hydrodynamic transport models is carried out.
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