Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2004 · 41 citations · 5 references
ReliabilityElectrical EngineeringReliability EngineeringEngineeringOxide VcselsHardware ReliabilityNanoelectronicsApplied PhysicsTime-dependent Dielectric BreakdownFailure Analysis ResultsGb/s Oxide VcselsCircuit ReliabilityElectronic PackagingDevice ReliabilityMicroelectronicsOptoelectronics
Recent data on 10 Gb/s oxide VCSELs are presented. We cover failure analysis results on VCSELs that failed in the field, including failures due to electrostatic discharge (ESD) and those inherent to the limitations of the present mesa structure used in oxide VCSELs. An ongoing experiment to overcome these limitations is discussed.
5
Selective oxidation of buried AlGaAs versus AlAs layers
Kent D. Choquette, K.M. Geib, H. C. Chui et al. · Applied Physics Letters · 1996 · 85 citations
Materials Science, Selective Oxidation, Robust Oxide Apertures +15