Applied Physics Letters · 1992 · 32 citations · 12 references
Natural SciencesMaterials SciencePhysicsOpticsOptoelectronicsSemiconductor MaterialsNonlinear Optical MaterialsNonlinear OpticsOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor PhysicsAll-optical LogicGatingNonlinear Optical ResponseNonlinearityOptical BistabilityOptical NonlinearityReflectivityResponse Delay
The optical nonlinearity of a GaAs/AlAs periodic layered structure was experimentally investigated for the first time. The shift of the reflectivity peak with increasing intensity was observed. A reflectivity contrast of about 10:1 was obtained by varying the incident intensity. Hysteresis loops due to the response delay of both the electronic and the thermal nonlinearity were observed. All-optical logic operations were also demonstrated. A further improvement of the structure may lead to a new type of optical bistable device.
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Optical bistability in semiconductors
H. M. Gibbs, S. L. McCall, T. Venkatesan et al. · Applied Physics Letters · 1979 · 438 citations
Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon
H. M. Gibbs, S. S. Tarng, J. L. Jewell et al. · Applied Physics Letters · 1982 · 238 citations
GaAs-AlAs monolithic microresonator arrays
J. L. Jewell, Axel Scherer, S. L. McCall et al. · Applied Physics Letters · 1987 · 154 citations