Publication | Open Access
All-optical reflectivity tuning and logic gating in a GaAs/AlAs periodic layered structure
32
Citations
12
References
1992
Year
Optical MaterialsEngineeringNonlinear OpticsOptical Bistable DeviceLogic GatingOptical AmplifierOptical ComputingOptical PropertiesReflectivity PeakOptical SwitchingAll-optical Reflectivity TuningNanophotonicsPhotonicsPhysicsNon-linear OpticOptical NonlinearityNonlinear CrystalsElectro-optics DeviceApplied PhysicsGaas/alas PeriodicOptoelectronicsOptical Logic Gate
The optical nonlinearity of a GaAs/AlAs periodic layered structure was experimentally investigated for the first time. The shift of the reflectivity peak with increasing intensity was observed. A reflectivity contrast of about 10:1 was obtained by varying the incident intensity. Hysteresis loops due to the response delay of both the electronic and the thermal nonlinearity were observed. All-optical logic operations were also demonstrated. A further improvement of the structure may lead to a new type of optical bistable device.
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