Publication | Closed Access
Optical bistability in semiconductor periodic structures
95
Citations
13
References
1991
Year
Thz PhotonicsOptical BistabilityOptical MaterialsEngineeringNonlinear OpticsNonlinear Bistable DevicesQuantum MetamaterialsSemiconductorsIi-vi SemiconductorOptical PropertiesOptical SystemsCompound SemiconductorNanophotonicsPhotonicsPhysicsNon-linear OpticPhotonic MaterialsWave PropagationClassical OpticsTheoretical DemonstrationNonlinear CrystalsSemiconductor MaterialApplied PhysicsCrystalsDynamic MetamaterialsOptoelectronics
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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