Publication | Closed Access
Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon
237
Citations
7
References
1982
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic DevicesSuperlattice EtalonSemiconductorsOptical PropertiesQuantum MaterialsGaas-gaalas Superlattice éTalonCompound SemiconductorPhotonicsQuantum SciencePhysicsQuantum DeviceSwitching TimesElectro-optics DeviceApplied PhysicsOptoelectronicsSuperlattice Increase
The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice etalon. The superlattice consists of 61 periods of 336 Å GaAs and 401 Å Ga0.73Al0.27As. The intensities required are about 1 mW/ ( μm)2 and the switching times are 20–40 ns, similar to the low-temperature pure GaAs values. Room-temperature operation of semiconductor etalons enhances the likelihood of all-optical logic and switching.
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