Electronics Letters · 1981 · 48 citations · 3 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSpectroscopic AnalysisSpectroscopyAtomic SpectroscopyElectronic SpectroscopyInorganic SpectroscopyPhotoelectron SpectroscopyActivation EnergyActivation Energy DeterminationDeep-level ImpuritiesIndium PhosphideTrap CharacterizationTrap LevelsTrap State AnalysisTrap States
The characteristics of a single electron trap related to the iron deep level acceptor have been determined for the first time by DLTS techniques in indium phosphide. An activation energy of 0.63 eV and a capture cross-section of 3.5×10−14 cm2 have been measured. The presence of this trap in nominally undoped samples shows that iron can be an important residual impurity in InP.
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Deep traps in ideal n-InP Schottky diodes
A. M. White, Andrew Grant, Brian J. Day · Electronics Letters · 1978 · 40 citations