Electronically induced dislocation glide motion in hexagonal GaN single crystals

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura · Science · 1998 · 1.8K citations

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 960 citations

Optical Materials, Engineering, High Dislocation Densities +18

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

Theory of recombination-enhanced defect reactions in semiconductors

John D. Weeks, John C. Tully, Lionel C. Kimerling · Physical review. B, Solid state · 1975 · 302 citations

Semiconductors, Materials Science, Semiconductor Technology +13

Dislocation motion in GaN light-emitting devices and its effect on device lifetime

Lisa Sugiura · Journal of Applied Physics · 1997 · 123 citations

Semiconductors, Photonics, Electrical Engineering +15