AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD

Abstract

Metamorphic Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.50</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.50</sub> As/Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> As high electron mobility transistors (mHEMT) grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates have been successfully demonstrated for the first time. The grown structures exhibited 2-DEG mobilities over 4500 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V-s, with sheet carrier densities larger than 8 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> at room temperature. A 1.0-mum transistor exhibits a maximum transconductance of 587 mS/mm. The cut off and maximum oscillation frequencies were 32.3 and 44 GHz, respectively.