Characterization of Al<i>x</i>Ga1−<i>x</i>As–GaAs layer structures by scanning Auger electron microscopy

Abstract

Crater-edge and conventional depth profiling have been used to characterize epitaxial films of AlxGa1−xAs grown by LPE on GaAs (100) substrates. In order to reduce damage low energy (?500 eV) argon ions were used. From the high energy Auger transitions values of x were derived with an accuracy Δx=0.01. Minimum chemical interface widths were observed of 2.5 nm, independent of depth below the surface.