Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN

Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides

R. D. Shannon · Acta Crystallographica Section A · 1976 · 64.8K citations

Natural Sciences, Chemistry, Materials Science +17

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 418 citations

Engineering, Materials Engineering, Materials Science +17

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC

T. Sasaki, Takashi Matsuoka · Journal of Applied Physics · 1988 · 189 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy

Toru Sasaki, Sakae Zembutsu · Journal of Applied Physics · 1987 · 179 citations

Engineering, Materials Engineering, Materials Science +17