Applied Physics Letters · 1995 · 15 citations · 0 references
EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum OptoelectronicsQuantum WellsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand OffsetsHydrostatic PressurePhotoluminescencePhotoluminescence SpectroscopyQuantum Well Band StructureQuantum Well HeterostructuresValence BandValence Band Structure
Low-temperature (1.8 K) photoluminescence spectra of a Ga0.52In0.48P–(Al0.58Ga0.42)0.52In0.48P multiple quantum well have been measured as a function of hydrostatic pressure from 0 to 5.0 GPa. The extrapolation to zero pressure of the energy of the indirect k-and-real-space barrier X to well Γ transition allows the direct determination of the valence band offset for this heterojunction system. A value of ΔEv=(0.35±0.05)ΔEg is found, in good agreement with values previously determined from the theoretical modeling of quantum well transition energies.