Self‐Organization of InAs Quantum‐Dot Clusters Directed by Droplet Homoepitaxy

Abstract

Dotty structures: Ga droplets are formed by Ga flux and allowed to react with an As molecular flux; the droplet-homoepitaxy approach is then used to structure the GaAs(100) surface at the nanometer scale. GaAs nanoscale mounds elongated along the [01] direction are observed. Subsequent deposition of InAs leads to the formation of quantum-dot clusters around the GaAs mounds (see image).