Field-effect transistor based on organometallic Langmuir-Blodgett film

Christopher E. Pearson, J. Gibson, M.C. Petty, Adrian J. Moore, Martin R. Bryce

Electronics Letters · 1993 · 25 citations · 2 references

Concepts

Abstract

The fabrication of a thin film transistor based on a Langmuir-Blodgett film of an organo-metallic chargetransfer material, (N-octadecylpyridinium)-Ni(dmit)2 is reported. Saturation in the source-drain current is observed at large gate voltages. The charge carrier mobility is ̃ 0.2 cm2 V−1 s−1 after the organic layer has been doped with iodine.

References

2