Eu locations in Eu-doped InGaN∕GaN quantum dots

Abstract

We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by plasma-assisted molecular-beam epitaxy. The location of Eu3+ ions either in InGaN QDs or in the GaN spacing layer is assigned by comparing the different behaviors of the D05→F27 emission around 620nm under various photoexcitation energies and temperatures to those observed in Eu-doped GaN∕AlN QDs and a Eu-doped GaN thick layer.