Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobe

Abstract

The Raman frequency, intensity, and bandwidth of the ion implanted and cw laser annealed polycrystalline Si films have been measured by the Raman microprobe with a spatial resolution of 1 μm. The crystallinity estimated from these quantities changes drastically at the boundary region between the annealed and amorphous regions which is 6∼8 μm in width. The polarization measurement of the Raman scattering enables the estimation of grain size of the annealed region.