Properties investigation of thin silicon nitride layers synthesized by ion implantation

Abstract

Abstract Structure and phase transformations of Si irradiated by nitrogen ions of 60 keV with doses from 5 × 1015 ions.cm−2 to 6 × 1017 ions.cm−2, and ion current density 20 μA cm−2 have been studied by transmission electron microscopy and ir absorption techniques. The samples were annealed in vacuum from 600°C to 1100°C.