Applied Physics Letters · 1993 · 11 citations · 2 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectronic Material CharacterizationElectronic Transport ModelingSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsElectrical Transport PropertiesHall EffectHall Effect MeasurementsHeterostructure Device ModelingMagnetic Field DependenceTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Semiconductor Heterostructures
A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov–de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.
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