Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior

Abstract

Incorporation of temperature dependencies in the one-dimensional Poisson's equation for use in numerical simulation of MOSFET threshold behavior from 350 to 50 K is discussed. Careful consideration has been given to accurate modeling of impurity freeze-out and temperature-dependent parameters. Examples of simulation of depletion-mode MOSFET's demonstrate the importance of proper modeling and show that impurity freezeout must be considered even at room temperature.