Electronics Letters · 1988 · 24 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor Thin FilmsWide Band Gap SemiconductorsConductanceDevice FabricationHeterostructure DevicesTransconductance
1μm gate GaAs MESFETs with AlGaAs/GaAs buffer layers were grown on (100) InP substrates by low-pressure MOCVD. The linewidth of the X-ray rocking curve on this material is 315 arc seconds. Device transconductance of 220mS/mm and output conductance of l.2 mS/mm were achieved.
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Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure
Akira Suzuki, Tetsuji Itoh, T. Terakado et al. · Electronics Letters · 1987 · 55 citations