MOCVD of Bismuth Oxides:  Transport Properties and Deposition Mechanisms of the Bi(C₆H₅)₃ Precursor

Abstract

Deposition processes of bismuth oxides have been investigated using the Bi(C 6 H 5 ) 3 precursor. The role of the MOCVD parameters has been evaluated through the study of both the precursor sublimation and the entire CVD process depending on the temperature and the reactor environment. In the 350−450 °C range, Bi 2 O 3 deposition follows a heterogeneous pathway leading to the dissociation of Bi−phenyl bonds. O 2 plays a determining role in both the precursor decomposition and Bi 2 O 3 growth. Above 450 °C, the oxidative break-down of the aromatic ring has been also observed. The temperature effect on Bi 2 O 3 growth on platinum and iridium substrates has been investigated by grazing incident X-ray diffraction, SEM, and EDX measurements. Overall results indicate that a heterogeneous process predominantly controls the Bi 2 O 3 deposition.