physica status solidi (b) · 1999 · 88 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocation MechanicsDislocations In SemiconductorsEpitaxial GrowthIii-v SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsDislocation DensityDislocation DynamicsDislocation MechanismsDislocation PhysicsGallium NitrideGallium Nitride (Gan) MaterialsIn Situ StressStrain Effects
In organometallic vapor phase epitaxial growth of AlGaN on sapphire, the role of the low-temperature-deposited interlayers on a high-temperature-grown GaN layer was investigated by in-situ stress measurement, X-ray diffraction, and transmission electron microscopy. Crack-free and low-dislocation-density AlGaN with the whole compositional range has been realized on the sapphire substrate.