Heteroepitaxy of β-SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer

Abstract

Methyltrichlorosilane and a novel precursor methyltribromosilane have been used for the heteroepitaxial deposition of β-SiC on Si(100) at a relatively low temperature of 1150–1200 °C without any carbon buffer layer. The low deposition temperature and an improved temperature program during the annealing of the substrate for cleaning and subsequent deposition of the film allowed us to prepare β-SiC epitaxial films of high structural quality which is documented by the x-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy.