Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

In-Hwan Baek, M.S. Lee, S. Sco et al. · 2005 · 518 citations

Materials Science, Non-volatile Memory, Electrical Engineering +11

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

Doo Seok Jeong, H. Schroeder, U. Breuer et al. · Journal of Applied Physics · 2008 · 283 citations

Materials Science, Electrical Resistance, Electrical Engineering +14

Improvement of resistive memory switching in NiO using IrO2

D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations

Materials Science, Nio Growth, Electrical Engineering +13

Effects of metal electrodes on the resistive memory switching property of NiO thin films

C. B. Lee, B. S. Kang, Anass Benayad et al. · Applied Physics Letters · 2008 · 183 citations

Engineering, Phase Change Memory, Various Metal Electrodes +16

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Heng-Yuan Lee, Pang-Shiu Chen, Ching‐Chiun Wang et al. · Japanese Journal of Applied Physics · 2007 · 171 citations

Materials Science, Non-volatile Memory, Electrical Engineering +14