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Effects of switching from 〈110〉 to 〈100〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors

SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineeringP-channel Metal–oxide-semiconductor TransistorsStress-induced Leakage CurrentOxide SemiconductorsApplied PhysicsTensile StressChannel OrientationMicroelectronicsSemiconductor Device