V.L. Lo

The physical origin of random telegraph noise after dielectric breakdown

X. Li, Ching‐Hsuan Tung, K. L. Pey et al. · Applied Physics Letters · 2009 · 34 citations

Engineering, Electrical Engineering, Physics +17

Breakdowns in high-k gate stacks of nano-scale CMOS devices

K. L. Pey, Rakesh Ranjan, Ching‐Hsuan Tung et al. · Microelectronic Engineering · 2005 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +14

The chemistry of gate dielectric breakdown

X. Li, C. H. Tung, K. L. Pey et al. · 2008 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements

K. L. Pey, V.L. Lo, C. H. Tung et al. · 2005 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Multiple Digital Breakdowns and Its Consequence on Ultrathin Gate Dielectrics Reliability Prediction

V.L. Lo, K. L. Pey, C. H. Tung et al. · 2007 · 16 citations

Engineering, Electrical Engineering, Physics +17