Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy - Concepedia

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Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy

21

Citations

10

References

2000

Year

Alisson Padilha de Lima, C. R. Miskys, U. Karrer, O. Ambacher, A. Wenzel, B. Rauschenbach, M. Stutzmann

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMultilayer HeterostructuresCategoryiii-v SemiconductorOptoelectronicsQuaternary Alingan/gan Heterostructures

References

	Year	Citations

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