physica status solidi (RRL) - Rapid Research Letters · 2007 · 88 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface ScienceThin FilmsAtomic Force MicroscopyMemory DevicesMemristive MaterialsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesConductive Filament FormationFilamentary StructureFilamentary Switching MechanismsNonvolatile MemoryNonvolatile Memory MaterialsResistive SwitchingThin Oxide FilmsTransition Metal Oxides
Abstract Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano‐sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing–atomic force microscopy and ultra‐thin (<5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
15
Reproducible resistance switching in polycrystalline NiO films
Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations
Natural Sciences, Materials Engineering, Materials Science +16
Switching properties of thin Nio films
J. F. Gibbons, W.E. Beadle · Solid-State Electronics · 1964 · 497 citations
Natural Sciences, Materials Engineering, Materials Science +9