Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy

Abstract

Diode structure with a (ZnSe/ZnCdSe) 5 multiple quantum-well active layer sandwiched between n- and p-ZnSe layers was grown on a (100) GaAs substrate by gas source molecular beam epitaxy using H 2 Se. Stimulated emission from the diode structure was observed at a wavelength of 486 nm under a pulsed current injection at 77 K. The threshold current density was 1.16 kA/cm 2 .