Publication | Closed Access
Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction
101
Citations
10
References
2006
Year
Point DefectsEngineeringSevere Plastic DeformationSynchrotron X-ray MicrodiffractionInterconnect (Integrated Circuits)Microstructure-strength RelationshipElectronic PackagingElectrochemical InterfaceMaterials ScienceMaterials EngineeringElectromigration TechniquePhysicsSolid MechanicsDefect FormationPlasticityMicrostructurePlastic DeformationCrystal PlasticityMaterial AnalysisDislocation InteractionApplied PhysicsHillock Formation
Plastic deformation was observed in damascene Cu interconnect test structures during an in situ electromigration experiment and before the onset of visible microstructural damage (voiding, hillock formation). We show here, using a synchrotron technique of white beam x-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the linewidth. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. The deformation geometry leads us to conclude that dislocations introduced by plastic flow lie predominantly in the direction of electron flow and may provide additional easy paths for the transport of point defects. Since these findings occur long before any observable voids or hillocks are formed, they may have direct bearing on the final failure stages of electromigration.
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