High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

S. H. Huang, Ganesh Balakrishnan, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2006 · 259 citations

Engineering, Materials Science, Physics +17

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

R. M. Biefeld · Materials Science and Engineering R Reports · 2002 · 135 citations

Engineering, Materials Engineering, Materials Science +12

Mobility enhancement in strained p-InGaSb quantum wells

B. R. Bennett, Mario G. Ancona, J.B. Boos et al. · Applied Physics Letters · 2007 · 100 citations

Engineering, Electrical Engineering, Materials Science +17

III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs

Ganesh Balakrishnan, Jun Tatebayashi, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2006 · 93 citations

Natural Sciences, Materials Science, Physics +14

Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

A. Jallipalli, Ganesh Balakrishnan, S. Huang et al. · Journal of Crystal Growth · 2006 · 71 citations

Engineering, Materials Engineering, Materials Science +17