Heterojunction Diodes Comprising p-Type Ultrananocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates

Abstract

Heterojunction diodes, which comprise boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films prepared by coaxial arc plasma deposition and n-type Si substrates, were electrically studied. The current–voltage characteristics showed a typical rectification action. An ideality factor of 3.7 in the forward-current implies that carrier transport is accompanied by some processes such as tunneling in addition to the generation–recombination process. From the capacitance–voltage measurements, the built-in potential was estimated to be approximately 0.6 eV, which is in agreement with that in a band diagram prepared on the assumption that carriers are transported in an a-C:H matrix in UNCD/a-C:H. Photodetection for 254 nm monochromatic light, which is predominantly attributable to photocurrents generated in UNCD grains, was evidently confirmed in heterojunctions. Since dangling bonds are detectable by electron spin resonance spectroscopy, their control might be an important key for improving the rectifying action and photodetection performance.