Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage

Abstract

Electron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by interactions of the silicon surface with atmospheric gases. Similar lines appear in germanium, silicon carbide, and diamond. The dominant line produced by mechanical damage to MgO is attributed to F centers. Similar lines are observed in other II-VI compounds. Results are also reported for a number of other materials. Similarity between defects produced mechanically and by fast neutrons is noted.