Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals. II. Microwave conductivity

Abstract

Microwave conductivity (σω) of heavily dislocated Si single crystals doped with boron (1013 cm−3) and phosphorus (2 × 1014 cm−3) is studied at 9500 MHz within the temperature range 20 to 200 K. The model for the energy spectrum of electrons localized in dislocation cores in silicon is suggested. In accordance with this model, the electrons of the dangling bonds of dislocations are in Hubbard dielectric state with an energy gap of 0.25 eV and E1, E2 bands width of 0.06 eV.